STMicroelectronics introduces the latest MDmeshTM Dk5 power MOSFET with a fast recovery diode high voltage (VHV) superjunction transistor inside, which allows designers to maximize the energy efficiency of various power conversion topologies, including zero voltage Switch (ZVS) LLC resonant converter.
As a super-junction MOSFET, the new product is rated at 950V to 1050V, and the switching performance, on-resistance (RDS(ON)), and rated current per unit of silicon flow are superior to those of planar MOSFET transistors. In power converters for high-power equipment, such as high-bus voltage telecom servers or data center servers, industrial electric welders, plasma generators, high-frequency induction heaters and X-ray machines, ST 's new products allow design Personnel can improve application energy efficiency and reduce the number of parallel devices to increase power density.
The internal fast recovery body diode allows the new product to increase the energy efficiency of the zero-voltage switching LLC resonant converter, meeting the application requirements for wide voltage input and high energy efficiency. Other types of bridge converters and battery charge boost DC/DC converters will also benefit from the low loss and high dynamic performance of new products. STMicroelectronics DK5 products offer the shortest reverse recovery time (trr), lowest MOSFET gate charge (Qg) and on-resistance RDS(ON) compared to the market's existing very high voltage MOSFETs with built-in fast recovery diodes . And good output input capacitance (Coss, Ciss) in super junction products.
The DK5 family expands ST's lineup of very high voltage superjunction transistors, covering the 800V to 1500V range, adding six new TO-247, TO-247 long-leg, Max247 and ISOTOP power packages. The STWA40N95DK5, STY50N105DK5 and STW40N95DK5 have started mass production.
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