Bank of America/Merrill Lynch pointed out that in the past five years, the RF chip industry has maintained a growth rate of 20% per year. This year, the demand for smart phones such as the Apple iPhone 6S has declined. However, according to the latest IC market report released by IC Insights, a semiconductor market research organization, the shipments of Chinese mobile phone manufacturers broke out in 2016, ranking among the top 12 in the world, and the performance was very eye-catching. Chinese smartphones have become the mainstay of the global smartphone market. The RF chip industry has grown rapidly in China.
"Qorvo will have many leading technologies in the future 5G RF market, such as gallium nitride (GaN) technology, which is very suitable for millimeter wave devices. Not only that, but now multi-frequency multi-mode LTE mobile phones, especially the carrier's latest carrier aggregation requirements. For other technologies, BAW (Body Acoustic Wave) filters are needed in large quantities, and multiple BAWs are used in a mobile phone, which is also a very leading field for Qorvo," said Bob Bruggeworth, President and CEO of Qorvo Global. The technology will contribute more and more sales and profits to Qorvo."
According to reports, some frequency bands of 5G will adopt millimeter wave and the speed will reach several Gbps or more. This is indeed a great challenge for mobile phone RF devices. Gallium nitride (GaN) technology will have great advantages for this 5G application. . Qorvo is the leading supplier of GaN devices on radar. Qorvo manufactures a wide range of semiconductor materials such as GaAs, GaN, Si, etc. From the front-end process to the back-end package testing, Qorvo has all the technology.
Fortunately, Qorvo's highest technical authority, Senior Fellow Bill Roesch, has given lectures to Huawei engineers this year. On the afternoon of August 29th, he gave a technical training course open to the public at the Shenzhen University of Science and Technology, Shenzhen University of Science and Technology. The theme is: GaN Technology trends and reliability challenges in the field of high-power RF components such as InP, GaAs and other III-V composite semiconductors. There is a rare opportunity for free lectures, but the seats are limited. Only 50 places are open. First, the applicants will get first.
Organizer: Electronic enthusiasts
Co-organizer: Maker RF Space, Shenzhen Communication Society, Huaqiang Zhi
Time: August 29, 2016 13:30-16:00
Venue: Room 210, 2nd Floor, Shenzhen Science and Technology Research Building, Hong Kong University of Science and Technology
No. 9 Yuexing, No.1 High-tech Industrial Park, Nanshan District, Shenzhen
Speaker: Bill Roesch
Position: Qorvo Senior Fellow
Topic: Technology Trends and Reliability Challenges for III-V Components
Background: 1) IEEE and members of the Reliability Society;
2) Member of the Executive Committee of the 31-year-old Composite Semiconductor Reliability Studio;
3) IEDEC JC-14.7 active members;
4) Patent: The actual failure mechanism that causes GaAs hydrogen degradation is found.
Invention: 1) heater design for detecting vias;
2) Crack detector for the substrate via.
Training seminar schedule:
13:30-14:30 Guest sign-in exchange
14:30-15:30 Bill Roesch Lecture
15:30-16:00 Guest Q&A
On-site professional translation, let you communicate without barriers!
Please scan or click on the QR code to register: 
Learn more about the seminar: http://
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