LED chip Dachang Jingdian released a press release on March 11th stating that Jingdian obtained the technical license of ALLOS Semiconductors for GaN-on-Si and successfully completed the first phase of technology transfer.
Crystal and Germany's engineering consultancy ALLOS Semiconductors today announced that Crystal has licensed GaN-on-Si technology and has successfully completed the first phase of technology transfer. The technology transfer plan establishes 150mm and 200mm GaN-on-Si epitaxial processes with excellent homogeneity in the crystal epitaxy machine. In this technology transfer process, Jingdian has fully mastered the GaN-on-Si technology and integrated it with the original advanced LED technology. Through the transfer of proprietary technology and training of engineers specializing in GaN-on-Si technology, Ensure that Crystal Power can develop this technology independently. GaN-on-Si epitaxial technology has also opened up the possibility of fabricating epitaxial wafers using silicon foundry.
Prior to working with ALLOS Semiconductors, Crystal has accumulated a wealth of experience in this technology through the substrates provided by AZZURRO Semiconductors. ALLOS acquired the technology, know-how and patent rights of AZZURRO Semiconductors at the end of last year (2014), and Crystal Power was able to conduct related consulting and customized development services through ALLOS. The opportunity to use this technology prompted Crystal to determine the pace of accelerated development. Dr. Zhou Mingjun, general manager, said: "This technology can be transferred in a short period of time to achieve complete technical capabilities, and it can do more with less in terms of time and cost. The effect of the company.†General Manager Zhou also said from the company's strategy: “Crystal has always been concerned about GaN-on-Si technology, because it has advantages in many applications, and large-size substrates are expected to reduce manufacturing. cost."
At the same time, CTO is also the founder of ALLOS. Dr. Atsushi Nishikawa believes: "We can assist LED manufacturers and high-power semiconductor industries to successfully launch their unique GaN-on-Si solutions without the support of their own licensing and technology transfer. Try to catch up with industry pioneers who have invested a lot of money and time in this technology, our service allows customers to get the most advanced technology in a few months." He thinks ALLOS customers, if they use ALLOS Providing proven GaN-on-Si technology platforms and proprietary technologies saves not only development costs and time to market, but also reduces the risk of intellectual property rights.
Crystal and Germany's engineering consultancy ALLOS Semiconductors today announced that Crystal has licensed GaN-on-Si technology and has successfully completed the first phase of technology transfer. The technology transfer plan establishes 150mm and 200mm GaN-on-Si epitaxial processes with excellent homogeneity in the crystal epitaxy machine. In this technology transfer process, Jingdian has fully mastered the GaN-on-Si technology and integrated it with the original advanced LED technology. Through the transfer of proprietary technology and training of engineers specializing in GaN-on-Si technology, Ensure that Crystal Power can develop this technology independently. GaN-on-Si epitaxial technology has also opened up the possibility of fabricating epitaxial wafers using silicon foundry.
Prior to working with ALLOS Semiconductors, Crystal has accumulated a wealth of experience in this technology through the substrates provided by AZZURRO Semiconductors. ALLOS acquired the technology, know-how and patent rights of AZZURRO Semiconductors at the end of last year (2014), and Crystal Power was able to conduct related consulting and customized development services through ALLOS. The opportunity to use this technology prompted Crystal to determine the pace of accelerated development. Dr. Zhou Mingjun, general manager, said: "This technology can be transferred in a short period of time to achieve complete technical capabilities, and it can do more with less in terms of time and cost. The effect of the company.†General Manager Zhou also said from the company's strategy: “Crystal has always been concerned about GaN-on-Si technology, because it has advantages in many applications, and large-size substrates are expected to reduce manufacturing. cost."
At the same time, CTO is also the founder of ALLOS. Dr. Atsushi Nishikawa believes: "We can assist LED manufacturers and high-power semiconductor industries to successfully launch their unique GaN-on-Si solutions without the support of their own licensing and technology transfer. Try to catch up with industry pioneers who have invested a lot of money and time in this technology, our service allows customers to get the most advanced technology in a few months." He thinks ALLOS customers, if they use ALLOS Providing proven GaN-on-Si technology platforms and proprietary technologies saves not only development costs and time to market, but also reduces the risk of intellectual property rights.
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